| 2008-11-28 20:34:00
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| 'Stress tests' probe nanoscale strains in materials |
| Researchers at the National Institute of Standards and Technology have demonstrated their ability to measure relatively low levels of stress or strain in regions of a semiconductor device as small as 10 nanometers across. Their recent results not only will impact the design of future generations of integrated circuits but also lay to rest a long-standing disagreement in results between two different methods for measuring stress in semiconductors. |
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